1 重庆光电技术研究所, 重庆 400060
2 电子科技大学 光电信息学院, 成都 610054
在低压金属有机化学气相沉积生长工艺中, 对用于制作850nm垂直腔面发射激光器件的GaAs/AlxGa1-xAs多量子阱外延结构的生长温度、反应室压力、总载气流量以及生长速度等主要工艺参量进行优化, 并进行了完整外延结构的生长.实验结果表明: 在700℃条件下, 得到多种组分的GaAs/AlxGa1-xAs多量子阱结构,通过光致发光谱对比测试得到的最佳组分x为0.24, 同时得到良好的表面形貌, 最终确定的最佳生长速度为0.34~0.511nm/s.
金属有机化学气相沉积 生长温度 多量子阱 生长速度 外延结构 Metal-organic chemical vapor deposition Growth temperature Multiple quantum well Growth rate Epitaxial structure
1 Chongqing Optoelectronics Research Institute, Chongqing 400060, CHN
2 State key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, CHN
MOCVD GaN stress-strain anneal 半导体光子学与技术
2008, 14(4): 224
1 Dept. of Appl. Phys., Chongqing University, Chongqing 400044, CHN
2 Chongqing Daily Group, Chongqing 400010, CHN
3 Chongqing Optoelectronics Research Institute, Chongqing 400060, CHN
Carbon nanotubes Strain Piezoresistivity Resistance change Band gap
1 Dept. of Appl. Phys., Chongqing University, Chongqing 400044 CHN
2 Chongqing Daily Group, Chongqing 400010, CHN
3 Chongqing Optoelectronics Research Institute, Chongqing 400060, CHN
Carbon nanotubes Surface Electron drag effect CVD Films 半导体光子学与技术
2004, 10(4): 271
Chongqing Optoelectronics Research Institute, Chongqing 400060, CHN
Polarization controller Model Design 半导体光子学与技术
2004, 10(4): 268
Chongqing Optoelectronics Research Institute, Chongqing 400060, CHN
FOG MIOC Beat detection Annealing and proton exchange